Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

Keybank National Association OH boosted its holdings in Diodes Incorporated (NASDAQ:DIOD – Free Report) by 15.4% during the 4th quarter, HoldingsChannel.com reports. The fund owned 6,461 shares of the ...

Mutual of America Capital Management LLC decreased its holdings in shares of Littelfuse, Inc. (NASDAQ:LFUS – Free Report) by ...

Learn more about whether Celestica Inc. or Littelfuse, Inc. is a better investment based on AAII's A+ Investor grades, which compare both companies' key financial metrics.

At the core of every smartphone, computer, and digital gadget lies a technological marvel that has transformed the 20th and ...

Learn more about whether Fabrinet or Vishay Intertechnology, Inc. is a better investment based on AAII's A+ Investor grades, which compare both companies' key financial metrics.

THE effect of stored holes in transistors has been reported by Meacham and Michaels 1, and the importance of the effect in the design of switching circuits was stressed by speakers in the ...

Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100V in RQFN 5x6 package (IGD015S10S1) and 80V in RQFN 3.3x3.3 package ...

State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China Guangdong Basic Research Center of Excellence for Energy and ...

Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia ...