The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

Corient Private Wealth LLC lessened its position in shares of Littelfuse, Inc. (NASDAQ:LFUS – Free Report) by 14.6% in the ...

Smartkem (Nasdaq: SMTK), which is seeking to change the world of electronics with a new class of transistor technology, has ...

Atria Investments Inc reduced its holdings in shares of Diodes Incorporated (NASDAQ:DIOD – Free Report) by 15.7% in the 4th ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

However, there is steady improvement in the orange, yellow and red, with a key milestone reached in 2014, thanks to research ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide ...

Available in Forest Green and Sunrise White, ZTE nubia Focus 2 Ultra balances power, performance, and photography features for ...

School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P.R. China Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, P.R.

Learn more about whether Celestica Inc. or Littelfuse, Inc. is a better investment based on AAII's A+ Investor grades, which compare both companies' key financial metrics.