Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

In most applications it has been supplanted by the Schottky diode, but even those usually don’t quite possess the speed in the point contact’s home ground of radio detection. This is a shame ...

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky ...

It’s based on a design by [DL5NEG] that uses a single Schottky diode and a handful of passive components. The design is simple, but as with all things RF, details count. Chief among these ...

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay ...

With features like a low forward voltage drop, minimal capacitive charge, and high-temperature operation, these diodes are ideal for power conversion in AC/DC PFC, photovoltaic systems, and more.

Vishay Intertechnology, Inc. has introduced 16 new 650V and 1200V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...