Abstract: A p-i-n diode waveguide phase shifter (PS) with a power handing capacity over 1 MW and a response time within 100 ns is proposed at the S-band. By inserting a conventional switchable ...

Abstract: This work investigates the response of specially developed silicon p-i-n diodes with a long base as sensors to measure displacement damage dose (DDD) in silicon. Measurements of DDD are ...

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