RF coupling is one of the most important and tricky issues that RFIC designers always must confront while developing wireless ...

A power tip that discusses how to address highly integrated USB PD charger design constraints with a self-biasing circuit.

Power over Ethernet (PoE) switches have fundamentally transformed how devices are powered and connected to industrial networks.By transmitting both power and data through a single Ethernet ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

It employs three cascode amplifier stages, each utilizing a gate-drain transformer as the load ... To further improve gain and optimize noise, an inductor is introduced to connect the common-source ...

This topology uses a Built-In Transformer (BIT) with a low current level and voltage multiplier cell to reach high voltage gains under appropriate duty cycles. In this circuit, an active clamp circuit ...

Infineon Technologies AG is introducing the E-version of its hybrid flyback controller family. Designed for high-performance ...

Siemens Digital Industries Software announced has expanded the cloud platforms of choice available for systems-of-systems development with its PAVE360 technology for Software Defined Vehicle (SDV) ...

Dimensions (mm) 163.52 x 77.50 x 8.39 158.51 x 74.88 x 9.16 ...