In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

This week’s PowerBites features two advances in battery technology plus a look at how electric marine propulsion is changing the shipping industry. And don’t forget to check ...

Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional ...

A power tip that discusses how to address highly integrated USB PD charger design constraints with a self-biasing circuit.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Semi announced a breakthrough in multi-level buck regulator technology that promises to revolutionize the mobile battery ...

Bi-Directional GaNFast™ plus new IsoFast™ drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, ...

Navitas Semiconductor has announced the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed ...

ATLANTA, March 13, 2025--pSemi, a global electronics innovator and Murata company, today announced a breakthrough in ...

Vishay Intertechnology, Inc. (NYSE: VSH) is set to highlight its latest advancements in power electronics at the Applied ...

Power over Ethernet (PoE) switches have fundamentally transformed how devices are powered and connected to industrial networks.By transmitting both power and data through a single Ethernet ...