In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

This week’s PowerBites features two advances in battery technology plus a look at how electric marine propulsion is changing the shipping industry. And don’t forget to check ...

Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional ...

A power tip that discusses how to address highly integrated USB PD charger design constraints with a self-biasing circuit.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Semi announced a breakthrough in multi-level buck regulator technology that promises to revolutionize the mobile battery ...

Bi-Directional GaNFast™ plus new IsoFast™ drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, ...

Navitas Semiconductor has announced the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed ...

ATLANTA, March 13, 2025--pSemi, a global electronics innovator and Murata company, today announced a breakthrough in ...